Effect of (He-Ne) Laser on Etching Parameters of CR-39 Irradiated with Alpha Particles

The effect (He-Ne) laser on the registration properties of alpha particle tracks on CR-39 track detector was studied. CR-39 detectors were exposed to different powers (1, 5 and 10 mW) of He-Ne laser beam at different times (5, 10 and 15 min) and then irradiated to alpha-particles from 226Ra source (laser+α). Track diameters (D), track density

(ρ)    were determined using 6.25 N NaOH at 60°C.

Bulk etching rate (VB), track etching rate (VT), critical angle (Өc), etching efficiency (η), Sensitivity (S), etching ratio rate (V) were calculated.

It’s found increase in the values of (D, ρ, VB, VT and Өc) with increase in the exposure times of laser at each power case, and decrease in the values of (η, S and V) with increase in the exposure time of laser at 1 mw power, while increasing within increase of exposed times of laser at (5 and 10 mW).

The optimum etching time of CR-39 detectors was (4 h) with NaOH etchant solation and 6.25 at temperature 60oC.

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